P2. Modification and application of virtual submesh cellular automata method in additive manufacturing
P3. New development in modeling of PVT SiC bulk crystal growth
P5. Modeling and Simulation of Silicon Epitaxy Growth in the Atmospheric Chemical Vapour Deposition Reactor
P6. A few progress in predicting solidi?cation kinetics using the time-dependent Ginzburg-Landau solidi?cation theory
P7. Atomistic Simulation Study of the Crystal-Melt Interface Excess Stresses
P8. Bubble behaviors at the solid-melt interface in crystal growth
P9. Bulk/surface engineering of g-C3N4 for high-efficiency photocatalytic H2 production
P13. Effects of water-cooled jacket on the oxygen distribution during the Czochralski silicon crystal growth process
P14. A new form of impurity cluster in casting quasi-single crystalline silicon
P15. Improvement of the thermal field to reduce edge dislocation of cast monocrystalline silicon
P16. Effects of melt depth on oxygen transport in silicon crystal growth with continuous-feeding Czochralski method
P17. Study on the thermal field uniformity in the cast monocrystalline silicon furnace
P18. Control of the seed crystal melting interface for the growth of monocrystalline silicon ingots
P19. Numerical study of 12 inch silicon crystal growth by continuous-feeding Czochralski
P20. Numerical study on the effects of inner crucible window heights on the growth of single-crystalline silicon in a continuous Czochralski process
P21. Effects of CUSP magnetic field on heat and oxygen transport during continues-feeding CZ process
P22. Crystallization interface correction in simulation of Czochralski crystal growth with an asymmetric magnetic field
P23. Effects of High-strength superconducting horizontal magnetic field on heat and flow transport by 3D simulation and experiments
P24. Thermal field design of resistance heated SiC crystal growth furnace by solution growth
P25. Stability of interfacial thermal balance in thick β-Ga2O3 crystal growth by EFG
P26. Study on three-dimensional critical nucleation on a planar substrate of SiC crystal
P27. Numerical study of die shape for the β-Ga2O3 crystal growth by EFG
P28. A new half metallic quaternary Heusler alloys for spin polarized device application and waste heat recovery treatment: Material computation
P29. Growth and Hirshfeld Surface Analysis of Imidazolium Fumarate (IMF) Single Crystal and DFT Computational Calculations for Third harmonic Generation
P30. The computational investigation of Co based quaternary Heusler alloys compatible for spin flip device and thermoelectric applications
P31. Numerical Investigation of Partial Replacement of Graphite Supporter to grow mc-Si on DS Furnace
P32. Modification of heat exchanger block to enhance the quality of mc-Si ingot grown by DS process for solar cell application
P33. Numerical investigation of non-metal impurities on the DS grown mc-silicon ingot: Effect of argon flow rate
P34. Kinetic Monte Carlo simulation study of the early stages of epitaxial SiC (0001) growth
P35. Effects of surface size and shape of polycrystalline powder on the silicon carbide crystal growth by PVT method
P36. Study on factors of large area graphene obtained by chemical vapor deposition
P37. Numerical investigation of Polysilicon Particle Growth in a Fluidized Bed Reactor
P39. Effect of cusp magnetic field on the turbulent melt flow and heat transfer during 300mm Czochralski silicon crystal growth
P40. Study on coating exfoliation damage of KDP component under laser irradiation by surface analysis
P41. Study on Diameter Control of Czochralski Silicon in Shouldering